Design Analysis for Advanced Wire Bond Designs

Half of all devices shipped today use advanced processes – 130nm and below. Virtually all of these use copper, many with at least 4 layers of interconnect. If one of these does not operate as designed or yield at the right level, what options are available to identify the root cause?

In the past emission microscopy, electron beam (E-beam) probing and focused ion beam (FIB) circuit edit addressed these challenges very successfully. This tool set enabled fault localization, in-circuit measurements and proof of design changes. At 4 or more metal layers the benefit of these tools drops off dramatically.

This paper describes an effective solution to this increasingly common issue.

Click here for the full paper (pdf)